Low-Temperature Growth of Silicon Dioxide Film by Photo-Chemical Vapor Deposition
- 1 November 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (11A) , L827-829
- https://doi.org/10.1143/jjap.23.l827
Abstract
Silicon dioxide films have been prepared from monosilane and oxygen gases using a low-pressure mercury lamp. The deposition rate is increased with UV irradiation and the activation energy is reduced to as low as 0.22 eV. The contribution of the 254 nm light to the deposition is concluded to be very small. The refractive index of the deposited film is 1.44∼1.46. The infrared absorption peaks related with Si–H bonding do not appear in the photo-CVD film.Keywords
This publication has 2 references indexed in Scilit:
- An Improved Method of Measuring the Zeeman Shift in Cesium Beam Frequency StandardsJapanese Journal of Applied Physics, 1984
- Laser-induced chemical vapor deposition of SiO2Applied Physics Letters, 1982