Theory of Transverse Extension of Gunn Domains
- 1 February 1970
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (2) , 774-778
- https://doi.org/10.1063/1.1658747
Abstract
A theory describing the growth of Gunn domains transverse to their direction of travel is developed. This theory is based on a model in which the dipole moment of a domain causes the field immediately adjacent to its lateral edge to exceed the negative resistance threshold. As the dipole moment begins to build up there, it causes the field farther along the lateral dimension to exceed threshold. From this model the velocity of transverse domain growth can be calculated as a function of the bias field and the maximum domain field. The calculated values of about 108 cm·sec−1 are in reasonable agreement with available experimental data.This publication has 8 references indexed in Scilit:
- Two-dimensional Gunn-domain dynamicsIEEE Transactions on Electron Devices, 1969
- Analysis and simulation of domain propagation in nonuniformly doped bulk GaAsIEEE Transactions on Electron Devices, 1969
- Electrical properties of a GaAs-W junction grown from the vapour phaseElectronics Letters, 1967
- Functional bulk semiconductor oscillatorsIEEE Transactions on Electron Devices, 1967
- Digital logic-circuit applications of Gunn diodesProceedings of the IEEE, 1967
- Synthesis of complex electronic functions by solid state bulk effectsSolid-State Electronics, 1967
- MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDEApplied Physics Letters, 1967
- A voltage tunable Gunn-effect oscillatorProceedings of the IEEE, 1967