Fabrication of Buried Co-Planar Metal-Insulator-Metal Nanojunctions with a Gap Lower than 10 nm
- 1 December 1995
- journal article
- Published by EDP Sciences in Journal de Physique III
- Vol. 5 (12) , 1983-1989
- https://doi.org/10.1051/jp3:1995243
Abstract
An improvement of a process to fabricate co-planar metal-insulator-metal nanojunctions is presented to reach a gap length much lower than 10 nm using a 20 keV e-beam and an AuPd lift-off. The electrodes of the nanojunction are less than 100 nm in width and are buried in the SiO2 substrate. For the 8 nm nanojunctions, the gap is still filled with SiO2 if care is taken about the SiO2 etching step of the processKeywords
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