Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InP
- 1 December 1983
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (12) , 7187-7189
- https://doi.org/10.1063/1.331956
Abstract
In1−x Alx As epitaxial layers were grown on (100) InP substrates by the organometallic vapor phase epitaxy method. Undoped layers with mirror smooth surfaces were obtained for substrate temperatures of 600–650 °C. By adjusting the relative ratio of In and Al, lattice matched In0.52 Al0.48 As epilayers were reproducibly grown on InP substrates. X‐ray measurements, scanning Auger analyses, and electron mobilities are presented. These results show that the quality of the epilayers obtained here was comparable to the best reported layers grown by other methods.This publication has 6 references indexed in Scilit:
- Silicon doping and impurity profiles in Ga0.47In0.53As and Al0.48In0.52As grown by molecular beam epitaxyJournal of Applied Physics, 1982
- Tin doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular-beam epitaxyJournal of Applied Physics, 1981
- GaInAs-AlInAs structures grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Double heterostructure Ga0.47In0.53As MESFETs by MBEIEEE Electron Device Letters, 1980
- A new method for the growth of GaAs epilayer at low H2 pressureJournal of Crystal Growth, 1978
- Conduction Bands in In1−xAlxPJournal of Applied Physics, 1970