Excimer Laser Crystallization of Amorphous Indium-Tin-Oxide and Its Application to Fine Patterning
- 1 October 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (10A) , L1119-1121
- https://doi.org/10.1143/jjap.37.l1119
Abstract
Polycrystalline indium-tin-oxide (ITO) thin films were prepared at an ambient temperature by irradiation of amorphous (a-) ITO with KrF excimer laser pulses of ≥40 mJ/cm2/pulse. Electrical resistivity of the specimen at ∼300 K decreased from 5.9×10-4 Ω·cm to 2.7×10-4 Ω·cm upon laser crystallization. Irradiation of a-ITO thin films through a phase mask led to the formation of a periodic structure composed of a-ITO and crystalline (c-) ITO. The micropattern of c-ITO was successfully formed by the chemical etching of the irradiated specimens, utilizing the large differences in the chemical etching rate between crystallized and amorphous ITOs.Keywords
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