Low-noise operation of m.o.s. transistors in common-gate connection

1 September 1967

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 3 (9) , 406-407
https://doi.org/10.1049/el:19670316

Abstract

The variations of noise factor with source resistance, for metal-oxide-semiconductor transistors (m.o.s.t.s) in the common-gate and the common-source connections, show a minimum. A theoretical explanation is derived in terms of equivalent noise generators, and compared with measurements on these devices. It is thereby shown that common-gate operation has advantages when low noise is required.

Keywords

COMMON GATE
NOISE
TRANSISTORS
SEMICONDUCTOR
THEORETICAL
M.O.S.T.S
EXPLANATION
MINIMUM

This publication has 1 reference indexed in Scilit:

TRANSISTOR NOISE
Published by Elsevier ,1964