Liquid phase epitaxy
- 1 June 1991
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 52 (6) , 380-409
- https://doi.org/10.1007/bf00323650
Abstract
No abstract availableKeywords
This publication has 106 references indexed in Scilit:
- Simultaneous liquid phase epitaxial growth of multilayer structures in a multislice boatJournal of Crystal Growth, 1982
- LPE growth of high purity InP and In1−xGaxP1−yAsyJournal of Crystal Growth, 1982
- Miscibility gaps in quaternary III/V alloysJournal of Crystal Growth, 1982
- Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution ApproximationJapanese Journal of Applied Physics, 1982
- High purity InP and InGaAsP grown by liquid phase epitaxyJournal of Crystal Growth, 1982
- Preparation and characterization of LPE InPJournal of Crystal Growth, 1981
- A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laserApplied Physics Letters, 1980
- A new technique for multilayer LPEJournal of Crystal Growth, 1977
- New uncooled injection heterolaser emitting in the 1.5–1.8 μ rangeSoviet Journal of Quantum Electronics, 1976
- DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2Applied Physics Letters, 1970