Monte-Carlo simulation of space-charge injection FET
- 22 July 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (15) , 670-671
- https://doi.org/10.1049/el:19820456
Abstract
Results of Monte-Carlo simulation of a new type of transistor, the space charge injection FET, are reported. Owing to the use of submicron undoped active regions, it seems possible to achieve low values of gate capacitance associated with high values of transconductance leading to a gain-bandwidth product close to the submillimetric wavelength range.Keywords
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