Optical emission actinometry and spectral line shapes in rf glow discharges
- 15 July 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (2) , 245-250
- https://doi.org/10.1063/1.333954
Abstract
Optical emission actinometry has been used recently as a means for estimating relative concentrations of radicals in rf plasmas. The technique relies upon normalization of the radical emission intensity to that from an inert gas (the actinometer) in order to compensate for changes in the electron density or energy distribution. However, actinometry is a valid measure of ground-state densities only when the excited states are created by electron-impact excitation (e.g., as opposed to chemiluminescent reactions or electron-impact dissociation). When techniques such as laser-induced fluorescence and optical-absorption spectroscopy are available, there is little need to use actinometry. However, there are many instances where these techniques are not yet applicable or practical and the use of actinometry may be desirable. In such instances, a simple means of assessing the validity of an actinometer would be advantageous. We describe the use of emission line shapes for determining the mechanism of excited-state formation and assessing the validity of an actinometer. In CF4/O2/Ar plasmas, both Ar* and F* are created with cold (360±70 K) translational distributions over a range of [F] from 0.4 to 4.0×1014 atoms cm−3. This implies that both species are created by electron-impact excitation and that Ar can be used as an actinometer in determining [F]. In Cl2/Ar plasmas, however, Cl* and Ar* emission line shapes in the sheath show substantial broadening during the cathodic part of the rf cycle, which implies that other excitation mechanisms such as dissociation, attachment, ion impact, and charge exchange are important and that actinometry is not valid under these conditions. But, time-averaged Cl* and Ar* emissions in the discharge center have identical linewidths, so that actinometry can be used to determine Cl atom concentrations.This publication has 25 references indexed in Scilit:
- Anisotropic etching of SiO2 in low-frequency CF4/O2 and NF3/Ar plasmasJournal of Applied Physics, 1984
- Crystallographic etching of GaAs with bromine and chlorine plasmasJournal of Applied Physics, 1983
- Summary Abstract: Laser‐induced fluorescence diagnostics of glow discharges: Spatially resolved concentration profilesJournal of Vacuum Science & Technology A, 1983
- Translational energy distribution and production mechanism of excited hydrogen atoms produced in electron-CH4 collisionsChemical Physics, 1981
- Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processesJournal of Applied Physics, 1981
- Translational energy distribution and production mechanism of excited hydrogen atoms produced by controlled electron impact on H2Chemical Physics, 1980
- Translational energy distribution of the excited hydrogen atom produced by controlled electron impact on HClChemical Physics, 1979
- Analysis of the translational energy distribution of H* produced in the eH2 collisionChemical Physics Letters, 1979
- Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmasJournal of Applied Physics, 1978
- Rigorous least squares adjustment: Application to some non-linear equations, IJournal of Chemical Education, 1965