FEDSS—Finite-element diffusion-simulation system
- 1 September 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (9) , 1004-1011
- https://doi.org/10.1109/t-ed.1983.21254
Abstract
The FEDSS program simulates semiconductor processes in two dimensions. An accurate model of the diffusion of impurity atoms into a substrate is necessary to assess the effects of process changes on impurity profiles. The process steps to be modeled include ion implantation, oxidation/drive-in, chemical predeposition through the surface, and oxide deposition. The finite-element method transforms the diffusion equation for impurity atoms to a simulation model at a discrete number of points. Direct techniques are used to solve the resulting matrix equations. The impurity distributions resulting from sequences of the process steps are shown.Keywords
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