Microwave capability of 1.5 μm-gate GaAs m.o.s.f.e.t.
- 8 December 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (25) , 761-763
- https://doi.org/10.1049/el:19770538
Abstract
1.5 μm-gate GaAs m.o.s.f.e.t.s have been fabricated by anodic oxidation, and the microwave capability has been examined. The maximum oscillation frequency fmax is 22 GHz and the noise figure is 6.1 dB at 8 GHz. The results are comparable to those of GaAs m.e.s.f.e.t.s.Keywords
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