A comprehensive vertical BJT mismatch model

27 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 83-86
https://doi.org/10.1109/bipol.1998.741885

Abstract

This paper presents a comprehensive mismatch model for vertical BJTs, valid over bias, geometry, and temperature. Mismatches in gain and collector and base currents are modeled based on the physical process and geometry dependence of SPICE Gummel-Poon model parameters.

Keywords

SOLID MODELING
GEOMETRY
RADIO FREQUENCY
SPICE
INTEGRATED CIRCUIT MODELING
MIRRORS
SEMICONDUCTOR PROCESS MODELING
MANUFACTURING
ANALOG INTEGRATED CIRCUITS
RADIOFREQUENCY INTEGRATED CIRCUITS

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