Near surface analysis of ion implanted dopants in gallium arsenide using RBS, PIXE, and TEM
- 30 April 1983
- journal article
- Published by Elsevier in Applications of Surface Science
- Vol. 15 (1-4) , 215-223
- https://doi.org/10.1016/0378-5963(83)90017-x
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Electric properties and distribution of sulfur implants in GaAsJournal of Applied Physics, 1982