Flat surface circular buried heterostructure surface emitting laser with highly reflective Si/SiO 2 mirrors

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Abstract
The threshold has been reduced and +0.2°C pulsed operation (1th = 150 mA) has been obtained for a flat surface buried heterostructure 1.3μm surface emitting laser. An in situ optical thickness monitor system was introduced into an electron beam evaporator to improve the optical thickness accuracy. 98–99% reflectivities have been obtained in Si/SiO2 multilayer reflectors.

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