Quantum-Critical Conductivity Scaling for a Metal-Insulator Transition
- 28 January 2000
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 287 (5453) , 633-636
- https://doi.org/10.1126/science.287.5453.633
Abstract
Temperature (T)- and frequency (ω)-dependent conductivity measurements are reported here in amorphous niobium-silicon alloys with compositions (x) near the zero-temperature metal-insulator transition. There is a one-to-one correspondence between the frequency- and temperature-dependent conductivity on both sides of the critical concentration, thus establishing the quantum-critical nature of the transition. The analysis of the conductivity leads to a universal scaling function and establishes the critical exponents. This scaling can be described by anx-,T-, and ω-dependent characteristic length, the form of which is derived by experiment.Keywords
This publication has 17 references indexed in Scilit:
- Evidence for Quantum Critical Behavior in the Optimally Doped Cuprate Bi 2 Sr 2 CaCu 2 O 8+δScience, 1999
- Absence of Scaling in the Integer Quantum Hall EffectPhysical Review Letters, 1998
- Temperature-Frequency Scaling in Amorphous Niobium-Silicon near the Metal-Insulator TransitionPhysical Review Letters, 1998
- Dynamical Signature of the Mott-Hubbard Transition in Ni(S,Se) 2Science, 1996
- The Metal-Insulator Transition in Correlated Disordered SystemsScience, 1996
- Resonant techniques for studying the complex electrodynamic response of conducting solids in the millimeter and submillimeter wave spectral rangeReview of Scientific Instruments, 1995
- Microwave frequency dependence of integer quantum Hall effect: Evidence for finite-frequency scalingPhysical Review Letters, 1993
- Finite-Size Scaling and Critical Exponents. A New Approach and Its Application to Anderson LocalisationEurophysics Letters, 1993
- Tunneling and Transport Measurements at the Metal-Insulator Transition of Amorphous Nb: SiPhysical Review Letters, 1983
- Electrons in disordered systems. Scaling near the mobility edgeZeitschrift für Physik B Condensed Matter, 1976