Magnetoresistance of a domain wall at a submicron junction
- 1 June 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (22) , R14901-R14904
- https://doi.org/10.1103/physrevb.61.r14901
Abstract
A local magnetoresistance (MR) effect associated with the switching of a coherent spin block confined in a cross-shaped junction of mesoscopic ferromagnetic NiFe wires was probed with the voltage pads attached close (Keywords
This publication has 15 references indexed in Scilit:
- Domain wall trapping probed by magnetoresistance and magnetic force microscopy in submicron ferromagnetic wire structuresJournal of Applied Physics, 1999
- Resistivity due to Domain Walls in Co Zigzag WiresPhysical Review Letters, 1999
- Domain Walls and Conductivity of Mesoscopic FerromagnetsPhysical Review Letters, 1998
- Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe WiresPhysical Review Letters, 1998
- Macroscopic quantum tunneling of ferromagnetic domain wallsPhysical Review B, 1997
- Resistivity due to a Domain Wall in Ferromagnetic MetalPhysical Review Letters, 1997
- Magnetoresistance behavior of submicron Ni80Fe20 wiresApplied Physics Letters, 1997
- Giant Magnetoresistive Effects in a Single Element Magnetic Thin FilmPhysical Review Letters, 1996
- Approach to mesoscopic magnetic measurementsPhysical Review B, 1995
- Origin of enhanced magnetoresistance of magnetic multilayers: Spin-dependent scattering from magnetic interface statesPhysical Review Letters, 1993