Influence of doping on the liquid-amorphous transition induced by picosecond laser irradiation of Si
- 15 August 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (4) , 370-372
- https://doi.org/10.1063/1.94341
Abstract
The effect of Bi doping on the quench of amorphous Si directly from the melt during 30-ps, 0.53-μm laser irradiation has been studied. The amorphous thickness (45 nm) in Bi implanted samples was observed to increase 50% over the corresponding undoped samples (25 nm). No change in the Bi profile was detected upon amorphization.Keywords
This publication has 8 references indexed in Scilit:
- Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser IrradiationPhysical Review Letters, 1983
- Transition metals in siliconApplied Physics A, 1983
- Transitions to Defective Crystal and the Amorphous State Induced in Elemental Si by Laser QuenchingPhysical Review Letters, 1982
- Space-time resolved reflectivity measurements of picosecond laser-pulse induced phase transitions in (111) silicon surface layersApplied Physics A, 1982
- Measurement of the Velocity of the Crystal-Liquid Interface in Pulsed Laser Annealing of SiPhysical Review Letters, 1982
- Optical Properties of Heavily Doped Silicon between 1.5 and 4.1 eVPhysical Review Letters, 1981
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979
- A melting model for pulsing-laser annealing of implanted semiconductorsJournal of Applied Physics, 1979