Trapping in defect states as a source of the pulse height defect in silicon surface barrier detectors
- 2 February 1967
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 48 (1) , 103-108
- https://doi.org/10.1016/0029-554x(67)90468-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952