GaAlAs window lasers emitting 500 mW CW in fundamental mode
- 30 August 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (18) , 1441-1442
- https://doi.org/10.1049/el:19900924
Abstract
Single element GaAlAs lasers using the buried heterostructure geometry with tapered waveguides and incorporating nonabsorbing facets have been fabricated. Metalorganic chemical vapour phase deposition was used for the double heterostructure first growth, and liquid phase epitaxy was used for the current confining and nonabsorbing facet second growth. 500 mW CW in single spatial mode emission was obtained from devices with 1 mm long cavities.Keywords
This publication has 1 reference indexed in Scilit:
- Quantum Well Ridge Waveguide Lasers Optimised For High Power Single Spatial Mode ApplicationsPublished by SPIE-Intl Soc Optical Eng ,1989