INFLUENCE OF CORRELATION EFFECTS ON THE ELECTRONIC PROPERTIES OF AMORPHOUS SILICON

1 October 1981

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 42 (C4) , C4-827
https://doi.org/10.1051/jphyscol:19814182

Abstract

The influence of correlation effects on the density of states deduced from field-effect and capacitance-voltage measurements are considered. A positive Hubbard U is required to account for the observed Curie-law behaviour of the magnetic susceptibility. Hence, statistics of correlated electrons have to be used rather than Fermi-statistics to calculate the density of states distribution function g(E) from the measured charge density. Within this model g(E) differs appreciably from previously published "field effect" densities

Keywords

ELECTRONIC PROPERTIES
CORRELATION EFFECTS
AMORPHOUS SILICON
INFLUENCE
PROPERTIES OF AMORPHOUS

This publication has 0 references indexed in Scilit: