Process-strained Si (PSS) CMOS technology featuring 3D strain engineering

Publisher Website

22 March 2004

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 3.7.1-3.7.4
https://doi.org/10.1109/iedm.2003.1269169

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Effects of uniaxial mechanical stress on drive current of 0.13 μm MOSFETs
IEEE Transactions on Electron Devices, 2003
On the mobility versus drain current relation for a nanoscale MOSFET
IEEE Electron Device Letters, 2001
A graphical representation of the piezoresistance coefficients in silicon
IEEE Transactions on Electron Devices, 1982