CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD
- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 14 (8) , 1031-1033
- https://doi.org/10.1109/lpt.2002.1021959
Abstract
We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-/spl mu/m vertical-cavity surface-emitting laser operating continuous wave up to 35/spl deg/C. The structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In/sub 0.4/Al/sub 0.6/As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.Keywords
This publication has 11 references indexed in Scilit:
- 88 °C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasersApplied Physics Letters, 2001
- Near-room-temperature continuous-wave operation of multiple-active-region 1.55 μm vertical-cavity lasers with high differential efficiencyApplied Physics Letters, 2000
- Pulse operation and threshold characteristics of 1.55-μm InAlGaAs-InAlAs VCSELsIEEE Photonics Technology Letters, 2000
- High-performance 1.6 µm single-epitaxy top-emittingVCSELElectronics Letters, 2000
- Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiencyApplied Physics Letters, 2000
- 1-mW CW-RT monolithic VCSEL at 1.55 μmIEEE Photonics Technology Letters, 1999
- Design and realization of a 1.55-μm patterned vertical cavity surface emitting laser with lattice-mismatched mirror layersJournal of Lightwave Technology, 1999
- Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at −30 nm gain offsetApplied Physics Letters, 1998
- Low resistance intracavity-contacted oxide-aperture VCSELsIEEE Photonics Technology Letters, 1998
- Modeling temperature effects and spatial hole burning to optimize vertical-cavity surface-emitting laser performanceIEEE Journal of Quantum Electronics, 1993