DEVICE CHARACTERISATION OF A HIGH DENSITY HALF-MICRON CMOS PROCESS

1 September 1988

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 49 (C4) , C4-33
https://doi.org/10.1051/jphyscol:1988405

Abstract

The device characterisation and the ringoscillator performance of a high density half-micron CMOS process were studied. A novel recessed field isolation technology, twin retrograde wells, N+ poly-silicon gate material and lightly doped drain structures for both the n- and p-channel devices were used in the device fabrication. The device properties and the ringoscillator performance will be presented

Keywords

DEVICE CHARACTERISATION
DENSITY HALF
CMOS PROCESS
HALF MICRON CMOS

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