Point Defect Generation during Phosphorus Diffusion in Silicon: II . Concentrations below Solid Solubility, Ion‐Implanted Phosphorus
- 1 September 1987
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 134 (9) , 2348-2356
- https://doi.org/10.1149/1.2100884
Abstract
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