Ultrafast GaAs microwave PIN diode

23 June 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (13) , 479-480
https://doi.org/10.1049/el:19830325

Abstract

This letter describes what is believed to be the first successful realisation of GaAs PIN diodes. The vertical structure was grown on an n⁺ substrate by MOCVD of a 2 μm, 10¹⁵ cm⁻³ unintentionally doped n⁻ layer followed by a 0.3 μm, 4×10¹⁹ cm⁻³ Zn doped p⁺ layer. The isolation and insertion loss of a single shunt-mounted device are typically −27 dB and 0.7 dB, respectively. The switching speed of the device was measured to be less than 1 ns.

Keywords

MICROWAVE P-I-N DIODE
INSERTION LOSS
N+-SUBSTRATE
VERTICAL STRUCTURE
SWITCHING SPEED
III-V SEMICONDUCTORS
SHUNT-MOUNTED DEVICE
EPITAXIAL GROWTH
VPE
ZN DOPED P+-LAYER
UNINTENTIONALLY DOPED N--LAYER
MOCVD
ISOLATION LOSS
GAAS

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