Operation of a high-frequency photodiode-HEMT hybrid photoreceiver at 10 GHz
- 8 May 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (10) , 509-510
- https://doi.org/10.1049/el:19860347
Abstract
A hybrid photoreceiver based on an ITO/GaAs photodiode integrated with a 0.5 μm gate length high electron mobility transistor (HEMT) is reported. The receiver gave an 8 dB associated gain at 10 GHz compared with a discrete detector.Keywords
This publication has 0 references indexed in Scilit: