Abstract
A low electric field applied during film deposition has a significant influence on the orientation of ferroelectric thin films prepared by pulsed laser deposition. C‐axis oriented growth of LiNbO3 films was demonstrated on fused silica with the aid of a low bias voltage Vb=0–120 V, and complete c‐axis orientation was achieved at Vb=110 V. In contrast, the electric field cannot induce c‐axis orientation of LiTaO3 films. Theoretical analysis suggests that the electrostatic energy provides an extra driving force for the c‐axis oriented growth of the ferroelectric films if the permittivity components satisfy ε3311≤2, as in LiNbO3 film, but not if ε3311>2 at the deposition temperature, as in LiTaO3 film.