Intervalley Scattering Mechanism in Silicon

The scattering mechanism in $n$-Si is discussed in the light of recent works of Folland and of Costato and Reggiani. The temperature variation of the mobility can be explained by using both these models, but the agreement with the Hall and magnetoresistance coefficients is not satisfactory. The same comment applies to the models suggested by Dumke and by Onton. The piezoresistance value calculated with these models is also found to be higher than the experimental value.