High power 6-18 GHz H/V switch designed in channelized wafer scale fabrication process

23 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2, 955-958 vol.2
https://doi.org/10.1109/mwsym.1996.511186

Abstract

A 6-18 GHz transfer switch is fabricated by a batch process technology, the HMIC (Heterolithic Microwave Integrated Circuit) process using shunt silicon diodes. The fabrication and design utilized a novel transmission medium incorporating signal channelization for high frequency high performance operation.

Keywords

SWITCHES
SWITCHING CIRCUITS
INTEGRATED CIRCUIT TECHNOLOGY
MICROWAVE TECHNOLOGY
MICROWAVE INTEGRATED CIRCUITS
SILICON
DIODES
FABRICATION
SIGNAL DESIGN
FREQUENCY

This publication has 2 references indexed in Scilit:

Microwave Semiconductor Engineering
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Design calculations of reverse bias characteristics for microwave p-i-n diodes
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