Composition, Chemical Bonding, and Contamination of Low Temperature SiO x N y Insulating Films

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Abstract
The stoichiometry and contamination of low temperature layers grown by the pyrolytic decomposition of silane in an ammonia‐ and oxygen‐rich atmosphere on and Si substrates are reported. The chemical composition and chemical bonding properties of the films have been analyzed by Auger, nuclear reaction analysis, optical, Rutherford backscattering, and SIMS techniques. Capacitors were fabricated on Si and substrates, and the electrical characteristics were measured. The layers exhibited physical characteristics similar to those of thermally grown layers. Analysis of the films indicated a uniform distribution of Si and O throughout the films. The N concentration measured in the films ranged from 1 to 3% of the O concentration, depending on the growth parameters. The optical results indicated some evidence of small amounts of Si‒N and N‒H bonding. All films grown on Si substrates in the presence of or on substrates had In and Sb contamination throughout, with the In and Sb content increasing from the film/substrate interface to the surface.

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