RAMAN SCATTERING IN ANNEAL STABLE AMORPHOUS SILICON

Publisher Website
Google Scholar
Abstract
First order Raman scattering measurements are reported on anneal stable amorphous Si prepared by chemical vapor deposition. The results in dicate substantial modifications of the Raman spectra relative to a-Si prepared by other methods. The results indicate improved short range order in CVD a-Si resulting from a narrowing of the bond angle distribution. Similarties t o a-Si1-xHx spectra suggest improved short order in the hydrogen alloys

This publication has 0 references indexed in Scilit: