High-speed self-aligned InP/GaInAs double heterostructure bipolar transistor with high current-driving capability
- 29 September 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (20) , 1293-1294
- https://doi.org/10.1049/el:19880881
Abstract
A fully self-aligned InP/GaInAs double heterostructure transistor has been fabricated using a substitutional emitter process. The small-signal current gain was typically 10–30 with a fT of 27 GHz. The maximum fT = 27 GHz occurred at current densities of 7 × 104 A cm−2, and the associated fmax was 20 GHz, the highest value obtained for InP-based bipolar transistors to date.Keywords
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