Arsenic antisite defects in As observed by luminescence-detected electron-spin resonance
- 15 July 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (3) , 2001-2004
- https://doi.org/10.1103/physrevb.40.2001
Abstract
We report on luminescence and optically detected electron-spin resonance investigations in As. The luminescence band found for 0.17≤x≤0.65 is caused by a deep donor-acceptor recombination involving an arsenic antisite defect with an energy-level position at eV. Neither the energy-level position nor the electron-spin resonance spectrum vary with the alloy composition.
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