Surface structures of silicon nitride thin films on Si(111)
- 1 May 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 366 (1-2) , 121-128
- https://doi.org/10.1016/s0040-6090(00)00852-x
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Thermally grownthin films on Si(100): Surface and interfacial compositionPhysical Review B, 1993
- Room-temperature Si3N4 and Ge3N4 growths by Si and Ge surface irradiation with a N2 electron cyclotron resonance plasma: An x-ray photoemission studyApplied Physics Letters, 1991
- and NO interaction with Si(100)-(2×1) surfacesPhysical Review B, 1991
- Atom-resolved surface chemistry studied by scanning tunneling microscopy and spectroscopyPhysical Review B, 1989
- Photoemission studies of the reactions of ammonia and N atoms with Si(100)-(2×1) and Si(111)-(7×7) surfacesPhysical Review B, 1988
- Atom-resolved surface chemistry using scanning tunneling microscopyPhysical Review Letters, 1988
- Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor depositionPhysical Review B, 1986
- Thermal nitridation of silicon: An XPS and LEED investigationJournal of Vacuum Science & Technology B, 1984
- Thermal nitridation of Si(111) by nitric oxideJournal of Vacuum Science and Technology, 1981
- Nitridation of silicon (111): Auger and LEED resultsJournal of Vacuum Science and Technology, 1980