Low temperature chemically assisted ion-beam etching processes using Cl2, CH3I, and IBr3 to etch InP optoelectronic devices
- 1 May 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (3) , 1780-1783
- https://doi.org/10.1116/1.588556
Abstract
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