Effect of Oxygen Impurity on Microstructure and Boron Penetration in a BF 2 + Implanted LPCVD Stacked Amorphous Silicon p+ Gated PMOS Capacitor
Open Access
- 1 July 1995
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 142 (7) , 2434-2437
- https://doi.org/10.1149/1.2044316
Abstract
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