Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/O2
- 1 March 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (3S)
- https://doi.org/10.1143/jjap.36.1477
Abstract
We present an insulator with a dielectric constant lower than 3.0, thermal stability up to 500° C and good gap-filling characteristics. This insulator was formed by downstream plasma chemical vapor deposition (CVD) at room temperature using tetra-methylsilane (TMS)/O2 gases. It contained a large amount of water in the as-deposited state. Annealing at 350° C resulted in a decrease in the water content of the insulator, and the insulator did not absorb water after the annealing. The film is constructed from Si–O and S i–C H 3 bonds, which produce a low dielectric constant and high thermal stability.Keywords
This publication has 1 reference indexed in Scilit:
- Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon OxideJapanese Journal of Applied Physics, 1994