Ballistic magnetoresistance over 3000% in Ni nanocontacts at room temperature
- 26 June 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 66 (2) , 020403
- https://doi.org/10.1103/physrevb.66.020403
Abstract
This paper reports ballistic magnetoresistance (BMR) measurements in Ni nanocontacts made by electrodeposition. BMR in excess of 3000% is observed at room temperature and the observed large values of BMR are obtained in switching fields of only a few hundred oersteds. The results are attributed to spin-dependent electron transport across nanometer sharp domain walls within the nanocontacts.Keywords
This publication has 13 references indexed in Scilit:
- Balistic magnetoresistance in nanocontacts electrochemically grown between macro- and microscopic ferromagnetic electrodesApplied Physics Letters, 2002
- Ballistic magnetoresistance in a magnetic nanometer sized contact: An effective gate for spintronicsApplied Physics Letters, 2001
- Ballistic magnetoresistance in a nanocontact between a Ni cluster and a magnetic thin filmApplied Physics Letters, 2001
- Electrochemically etched nickel tips for spin polarized scanning tunneling microscopyReview of Scientific Instruments, 2000
- Geometrically Constrained Magnetic WallPhysical Review Letters, 1999
- Domain Wall Scattering Explains 300% Ballistic Magnetoconductance of NanocontactsPhysical Review Letters, 1999
- Magnetoresistance in excess ofin Ballistic Ni Nanocontacts at Room Temperature and 100 OePhysical Review Letters, 1999
- Resistivity due to a Domain Wall in Ferromagnetic MetalPhysical Review Letters, 1997
- Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic SuperlatticesPhysical Review Letters, 1988
- Theory of the Residual Resistivity of Bloch Walls I. Paramagnetic EffectsPhysica Status Solidi (b), 1974