Hole traps in bulk and epitaxial GaAs crystals
- 27 October 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (22) , 666-668
- https://doi.org/10.1049/el:19770473
Abstract
Twelve different hole traps have been characterised in v.p.e., 1.p.e., m.b.e. and bulk-grown GaAs from d.1.t.s. experiments. Most are related to the presence of different impurities, some of which are identified. Although far from complete, this catalogue of hole traps can be a working tool, particularly for the assessment of the impurity contamination in a material.Keywords
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