High-resolution pattern formation featuring excellent dimension correlation by enhanced wettability development technology

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Abstract
We have demonstrated that the addition of surfactant to developer results in (1) the resolution of the contact holes as small as 0.30 micrometers with good dimension correlation, (2) an increase in the depth of focus at the minimum feature size, and (3) a reduction in the exposure energy needed to form fine patterns. The surfactant enhances the wettability of the developer to the photoresist, thus promoting dissolution of the photoresist, especially in narrow spaces such as contact holes. The optimal surfactant concentration in the developer performs superior development characteristics. In addition, we also demonstrate the effect of the molecular structure of surfactant on development performance.

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