A self-aligned EPROM structure with superior data retention
- 1 July 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (7) , 309-311
- https://doi.org/10.1109/55.56484
Abstract
A structure that exhibits superior data retention, compared to the conventional erasable programmable read-only memory (EPROM) cell, while still using phosphosilicate glass (PSG) passivation, is described. The nitrided self-aligned MOS (NIT-SAMOS) employs a thin layer of low-pressure chemical vapor deposition (LPCVD) nitride between the double-poly-gate structure and the poly-metal isolation dielectric, to reduce the possibility of contamination of the floating-gate area. Comparisons are made of EPROM data retention lifetimes, programmability, and UV erasability, and n- and p-channel device parameters.<>Keywords
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- The impact of an external sodium diffusion source on the reliability of MOS circuitryPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003