Evolution of the energy levels in quantum dot ensembles with different densities
- 27 September 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (13) , 1866-1868
- https://doi.org/10.1063/1.124854
Abstract
Ensembles of self-assembled InAs/GaAs quantum dots (QDs) have been obtained with different densities by molecular beam epitaxy. The evolution of the structural and optical properties with coverage shows that lateral interactions are present for QD spacings of hundreds of nanometers (coverage>∼109 QDs/cm2). Clear evidence for transfer of InAs from the wetting layer to the QDs is observed at the onset of the Stranski–Krastanow’s island formation for 1.83 monolayers (MLs). QDs with sharp electronic shell structures are observed by state-filling spectroscopy for the low density ensembles (1.83–1.91 ML). A decrease in the photoluminescence intensity is observed for more than 1.96 ML and is associated with the coalescence of the islands.Keywords
This publication has 23 references indexed in Scilit:
- Manipulating the energy levels of semiconductor quantum dotsPhysical Review B, 1999
- Coupling of ultrathin InAs layers as a tool for band-offset determinationPhysical Review B, 1999
- Optical properties of InAs quantum dots: Common trendsPhysical Review B, 1999
- Shape transition of InAs quantum dots by growth at high temperatureApplied Physics Letters, 1999
- Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emissionApplied Physics Letters, 1998
- Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting TransformationPhysical Review Letters, 1998
- Structural and radiative evolution in quantum dots near the Stranski-Krastanow transformationPhysical Review B, 1998
- Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transitionApplied Physics Letters, 1997
- Electronic structure and magneto-optics of self-assembled quantum dotsPhysical Review B, 1996
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994