1.3μm GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)
- 19 January 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (2) , 104-105
- https://doi.org/10.1049/el:19890077
Abstract
We report the first successful demonstration of a 1.3 μm GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well laser (BH-GRIN-SCMQW LD) entirely grown by three-step low pressure metalorganic chemical vapour deposition (LP-MOCVD). The threshold current and the differential quantum efficiency were 31 mA (threshold current density 3.4kA/cm2) and 28%/facet, respectively. A characteristic temperature of 65 K was obtained.Keywords
This publication has 0 references indexed in Scilit: