Atomic Ordering and Alloy Clustering in MBE-Grown InAsy Sb1-y Epitaxial Layers
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Long-range order in InAsSbApplied Physics Letters, 1989
- Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxyApplied Physics Letters, 1988
- Long-wavelength photoluminescence of InAs1−xSbx (0<x<1) grown by molecular beam epitaxy on (100) InAsApplied Physics Letters, 1988
- Liquid-phase-epitaxial InAsySb1−y on GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid-IR photodiodesJournal of Applied Physics, 1987
- Unstable Region in Quaternary In1-xGaxAs1-ySby Calculated Using Strictly Regular Solution ApproximationJapanese Journal of Applied Physics, 1982