High-efficiency GaAs power MESFETs prepared by ion implantation
- 9 December 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (25-26) , 1097-1099
- https://doi.org/10.1049/el:19820749
Abstract
GaAs power MESFETs have been fabricated using ion implantation to form channel layers. A 1 μm gate length by 2400 μm gate width device has demonstrated an output power of 1.63 W with 6.9 dB associated gain, 35% power-added efficiency and 9.7 dB linear gain at 10 GHz. The transconductance of this device is 280 mS, which corresponds to 117 mS/mm. This result demonstrates that excellent GaAs power MESFETs can be made by ion implantation, and is comparable to average results demonstrated by devices made by AsCl3 vapour phase epitaxy.Keywords
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