Thermoelectric Cyclotron Resonance in Germanium
- 1 April 1968
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (5) , 2255-2262
- https://doi.org/10.1063/1.1656539
Abstract
A novel method for observing cyclotron resonance in semiconductors has been predicted and observed. The measured parameter is a dc thermoelectric current generated by carriers which are heated by means of cyclotron resonance absorption in a spatially varying electromagnetic field. Measurements are reported for n- and p-type Ge at 4°K and 70 GHz. The thermoelectric current at resonance is found roughly to be proportional to the logarithm of the microwave power. The line shape also depends on power and, at power levels approaching the values for impact ionization, displays certain peculiarities. The power dependence of conductivity modulation by cyclotron absorption is also reported.This publication has 11 references indexed in Scilit:
- THERMOELECTRIC CYCLOTRON RESONANCE IN SEMICONDUCTORSApplied Physics Letters, 1966
- ``Thermoelectric Effect'' of Hot CarriersJournal of Applied Physics, 1965
- Microwave Hot-Electron Conduction in Many-Valley SemiconductorsPhysical Review B, 1965
- A method for the observation of cyclotron resonance at millimeter wavelengthsSolid State Communications, 1965
- Cyclotron Resonance of Hot Electrons in n-Type GermaniumJournal of the Physics Society Japan, 1963
- Electrical Conduction in-Type Germanium at Low TemperaturesPhysical Review B, 1962
- Hot Electron Effect in Cyclotron Resonance of GermaniumJournal of the Physics Society Japan, 1962
- Observation of Microwave Cyclotron Resonance by Cross ModulationPhysical Review Letters, 1958
- Impact ionization of impurities in germaniumJournal of Physics and Chemistry of Solids, 1957
- Recent Investigations in the Far Infra-RedJournal of the Optical Society of America, 1950