Thermally induced decomposition of single-wall carbon nanotubes adsorbed on H/Si(111)
- 16 December 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (25) , 4847-4849
- https://doi.org/10.1063/1.1530747
Abstract
The thermally driven reaction of carbon nanotubes with a silicon substrate is studied by photoemission spectroscopy and atomic force microscopy. Carbon nanotubes with a relatively high defect density are observed to decompose under reaction with silicon to form silicon carbide at temperatures (650±10 °C) substantially lower than the analogous reaction for adsorbed C60. The morphology of the resultant silicon carbide islands appears to reflect the morphology of the original nanotubes, suggesting a means by which SiC nanostrutures may be produced.Keywords
This publication has 15 references indexed in Scilit:
- Synthesis of SiC nanofibers by annealing carbon nanotubes covered with SiChemical Physics Letters, 2001
- Electronic structure and morphology of SiC films grown on Si(111) using C60 as a precursorSurface Science, 2000
- High resolution photoemission study of C60 on Si(111) as a precursor of SiC growthSurface Science, 2000
- Heterostructures of Single-Walled Carbon Nanotubes and Carbide NanorodsScience, 1999
- Temperature dependence of the electronic structure offilms adsorbed onandsurfacesPhysical Review B, 1999
- Continuous synthesis and characterization of silicon carbide nanorodsChemical Physics Letters, 1997
- Adsorption and decomposition of C60 molecules on Si(111) surfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Growth mechanism of silicon carbide films on silicon substrates using C60 carbonizationSurface Science, 1995
- Synthesis and characterization of carbide nanorodsNature, 1995
- Growth of silicon carbide films via C60 precursorsSurface Science, 1994