A 256-kbit flash E/SUP 2/PROM using triple-polysilicon technology
- 1 August 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 22 (4) , 548-552
- https://doi.org/10.1109/jssc.1987.1052771
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Page mode programming 1Mb CMOS EPROMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- A programmable 80ns 1Mb CMOS EPROMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- A 1Mb EPROMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- High-voltage regulation and process considerations for high-density 5 V-only E/sup 2/PROM'sIEEE Journal of Solid-State Circuits, 1983