Binding energies and chemical shifts of least bound core electron excitations in cubic ANB8−N semiconductors
- 1 October 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 107 (2) , 637-651
- https://doi.org/10.1002/pssb.2221070227
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Core-level binding-energy shifts for the metallic elementsPhysical Review B, 1980
- Temperature dependence of atomic core levels in solids I. Separation of the temperature dependence of conduction‐band and core‐exciton energiesPhysica Status Solidi (b), 1979
- Electronic polarization (relaxation) effects in the core level spectra of semiconductors. I. General theory of electronic polarization (relaxation) in semiconductorsPhysica Status Solidi (b), 1979
- Bond Charge Model for the Chemical Shift of the Photoemission in SemiconductorsPhysica Status Solidi (b), 1976
- Relaxation energies in chemisorption spectroscopyJournal of Vacuum Science and Technology, 1975
- Roothaan-Hartree-Fock atomic wavefunctionsAtomic Data and Nuclear Data Tables, 1974
- Local field effects and the dielectric response matrix of insulators: A modelPhysical Review B, 1974
- X-Ray Photoemission from Zinc: Evidence for Extra-Atomic Relaxation via Semilocalized ExcitonsPhysical Review B, 1973
- Relativistic Dirac-Fock expectation values for atoms with Z = 1 to Z = 120Atomic Data and Nuclear Data Tables, 1973
- Analytic Hartree-Fock Wave Functions for the-Shell AtomsPhysical Review B, 1961