GaInAsP semiconductor laser amplifiers for single-mode fiber communications
- 1 September 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 5 (9) , 1286-1295
- https://doi.org/10.1109/jlt.1987.1075637
Abstract
Gain, polarization sensitivity, saturation power, and noise characteristics of quaternary semiconductor laser amplifiers of the Fabry-Perot (FP) and traveling-wave (TW) types are reviewed. The status of antireflection coatings for TW amplifiers is presented. New results concerning the polarization sensitivity and output saturation power of a 1.5-μm buried-heterostructure (BH) amplifier are reported. A theoretical model is presented concerning the influence of the waveguide structure on the maximum internal gain of a CW-operating 1.5- μm BH amplifier, including thermal effects, and a comparison of this model with recent experimental results is reported. The influence of nonresonant losses on the noise factor of 1.5-μm amplifiers is discussed.Keywords
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